3. Specifications

3.1 Absolute Maximum Ratings

Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty.

Parameter	Minimum	Maximum	Unit
`CSIP`, `CSIN`, `DCIN`, `ADP`, `ASGATE`	-0.3	+36	V
`DCIN` - `VDD`	-0.3	+31	V
`PHASE1`	GND - 0.3	+36	V
`PHASE1`	GND - 2 (<20ns)	+36	V
`BOOT1`, `UGATE1`	GND - 0.3	VDDP+36	V
`PHASE2`	GND - 0.3	36	V
`PHASE2`	GND - 2 (<20ns)	36	V
`BOOT2`, `UGATE2`	GND - 0.3	VDDP+36	V
`LGATE1`, `LGATE2`	GND - 0.3	+6.5	V
`LGATE1`, `LGATE2`	GND - 2 (<20ns)	+6.5	V
`VBAT`, `VSYS`, `CSOP`, `CSON`, `BGATE`	-0.3	+36	V
`VDD`, `VDDP`	-0.3	+6.5	V
`COMP`	-0.3	+6.5	V
`AMON/BMON`, `PSYS`	-0.3	+6.5	V
`OTGEN`, `BATGONE`	-0.3	+6.5	V
`ACIN`, `PROCHOT#`, `OTGPG`, `ACOK`	-0.3	+6.5	V
`SCL`, `SDA`	-0.3	+6.5	V
`BOOT1` - `PHASE1`, `BOOT2` - `PHASE2`	-0.3	+6.5	V
`CSIP` - `CSIN`, `CSOP` - `CSON`	-0.3	+0.3	V
`OTGPG`, `PROCHOT#`, `ACOK`	-	2	mA
Junction Temperature Range (T_J)	-10	+125	°C
Storage Temperature Range (T_S)	-65	+175	°C
Human Body Model (Tested per JS-001-2023)	-	2	kV
Charged Device Model (Tested per JS-002-2022)	-	750	V
Latch-Up (Tested per JESD78E; Class 2, Level A)	-	100	mA

3.2 Recommended Operating Conditions

Parameter	Parameter	Minimum	Maximum	Unit
Ambient Temperature	RAA489118ARGNP	-10	+100	°C
Ambient Temperature	RAA489118A3GNP	-40	+100	°C
Junction Temperature	RAA489118ARGNP	-10	+125	°C
Junction Temperature	RAA489118A3GNP	-40	+125	°C
Adapter Voltage		+4	+30	V

3.3 Thermal Specifications

Parameter	Package	Symbol	Conditions	Typical Value	Unit
Thermal Resistance	32 Ld TQFN Package	θ_JA^[1]	Junction to ambient.	38	°C/W
Thermal Resistance	32 Ld TQFN Package	θ_JC^[2]	Junction to case.	2.5	°C/W

θ_JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features. See TB379.
For θ_JC, the case temperature location is the center of the exposed metal pad on the package underside.

3.4 Electrical Specifications

Operating conditions: ADP = CSIP = CSIN = 5V and 28V, VSYS = VBAT = CSOP = CSON = 8V and 29.4, unless otherwise noted. Boldface limits apply across the junction temperature range, -40°C to +125°C unless otherwise specified.

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
UVLO/ACOK
VADP UVLO Rising	`VADP_UVLO_r`	-	3.05	3.4	3.7	V
VADP UVLO Hysteresis^[2]	`VADP_UVLO_h`	-	-	600	-	mV
V_BAT UVLO Rising	`VBAT_UVLO_r`	-	2.30	2.45	2.65	V
V_BAT UVLO Hysteresis	`VBAT_UVLO_h`	-	-	400	-	mV
V_BAT 4P5V Rising	`VBAT_4P5_r`	-	4.25	4.50	4.90	V
V_BAT 4P5V Hysteresis	`VBAT_4P5_h`	-	-	400	-	mV
VDD 2P7 POR Falling, SMBus and BGATE/BMON Active Threshold	`VDD_2P7_f`	-	2.5	2.7	2.9	V
VDD 2P7 POR Hysteresis^[2]	`VDD_2P7_h`	-	-	150	-	mV
VDD 3P8 POR Rising, Modulator and Gate Driver Active	`VDD_3P8_r`	-	3.6	3.8	3.9	V
VDD 3P8 POR Hysteresis	`VDD_3P8_h`	-	-	140	-	mV
ACIN Rising	`ACIN_r`	-	0.58	0.6	0.615	V
ACIN Hysteresis	`ACIN_h`	-	-	50	-	mV
Linear Regulator
VDD Output Voltage	`VDD`	6V < V_DCIN < 30V	4.5	5.0	5.5	V
VDD Dropout Voltage	`VDD_dp`	<35mA, V_DCIN = 4V	-	-	200	mV
VDD Overcurrent Threshold	`VDD_OC`	ARGNP Junction Temperature: -10 to +125°C	85	115	145	mA
VDD Overcurrent Threshold	`VDD_OC`	A3GNP Junction Temperature: -40 to +125°C	85	115	155	mA

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
Battery Current	I_BAT1	Battery only, BGATE OFF, PSYS OFF, GPC OFF, BMON OFF, V_BAT = 29.4V, DCIN current comes from battery, I_BAT = I_VBAT + I_CSOP + I_CSON + I_DCIN + I_VSYS	-	24	50	µA
Battery Current	I_BAT2	Battery only, BGATE ON, PSYS OFF, GPC OFF, BMON ON, V_BAT = 29.4V, DCIN current comes from battery, I_BAT = I_VBAT + I_CSOP + I_CSON + I_DCIN + I_VSYS	-	74	-	µA
Battery Current	I_BAT3	Battery only, BGATE on, PSYS ON, BMON OFF, V_BAT = 29.4V, DCIN current comes from battery, I_BAT = I_VBAT + I_CSOP + I_CSON + I_DCIN + I_VSYS	-	925	1155	µA
Adapter Current Regulation, R_s1 = 10mΩ
Adapter Current Accuracy	-	CSIP - CSIN = 50mV	-	5	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 50mV	-2.2	-	2.2	%
Adapter Current Accuracy	-	CSIP - CSIN = 40mV	-	4	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 40mV	-2.5	-	2.5	%
Adapter Current Accuracy	-	CSIP - CSIN = 30mV	-	3	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 30mV	-3.5	-	3.5	%
Adapter Current Accuracy	-	CSIP - CSIN = 25mV	-	2.5	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 25mV	-4.2	-	4.2	%
Adapter Current Accuracy	-	CSIP - CSIN = 20mV	-	2	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 20mV	-5.0	-	5.0	%
Adapter Current Accuracy	-	CSIP - CSIN = 15mV	-	1.5	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 15mV	-6.9	-	6.9	%
Adapter Current Accuracy	-	CSIP - CSIN = 10mV	-	1	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 10mV	-10	-	10	%
Adapter Current Accuracy	-	CSIP - CSIN = 5mV	-	0.5	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 5mV	-20	-	20	%
Adapter Current Accuracy	-	CSIP - CSIN = 2.5mV	-	0.25	-	A
Adapter Current Accuracy	-	CSIP - CSIN = 2.5mV	-40	-	40	%
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0B00H` (5.632A)	-	5.632	-	A
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0B00H` (5.632A)	-1.5	-	1.5	%
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0500H` (2.56A)	-	2.56	-	A
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0500H` (2.56A)	-2.5	-	2.5	%
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0400H` (2.048A)	-	2.048	-	A
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0400H` (2.048A)	-4	-	4	%
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0200H` (1.024A)	-	1.024	-	A
Adapter Current PROCHOT# Threshold R_s1 = 10mΩ	I_{ADP_HOT_TH10}	ACProchot = `0x0200H` (1.024A)	-6	-	6	%

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
System Voltage Regulation
Maximum System Voltage Accuracy	-	MaxSystemVoltage for 8.4V and 12.6V	-1.0	-	1.0	%
Maximum System Voltage Accuracy	-	MaxSystemVoltage for 16.8V and 21V	-0.75	-	0.75	%
Maximum System Voltage Accuracy	-	MaxSystemVoltage for 25.2V and 29.4V	-0.5	-	0.5	%
Minimum System Voltage Accuracy	-	VDAC = 5V to 25V	-3	-	3	%
Input Voltage Regulation Accuracy	-	Input Voltage Register = 4.096V	3.92	-	4.18	V
Charge Current Regulation, R_s2 = 5mΩ (Limits apply across temperature range of 0°C to +85°C)
Charge Current Accuracy	-	V_CSOP - V_CSON = 30mV	-	6	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 30mV	-3.5	-	3.5	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 25mV	-	5	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 25mV	-3.85	-	3.85	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 20mV	-	4	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 20mV	-4	-	4	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 15mV	-	3	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 15mV	-5.2	-	5.2	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 10mV	-	2	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 10mV	-6	-	6	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 5mV	-	1	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 5mV	-12	-	12	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 2.5mV	-	0.5	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 2.5mV	-22.2	-	22.2	%
Charge Current Accuracy	-	V_CSOP - V_CSON = 1.28mV	-	0.256	-	A
Charge Current Accuracy	-	V_CSOP - V_CSON = 1.28mV	-42	-	42	%
BGATE Clamp
VSYS - VBGATE ON	-	Charging enabled	7.45	8.30	9.05	V
VSYS - VBGATE OFF	-	Charging disabled	-	0	-	V
ASGATE Clamp
VADP - VASGATE ON	-		-	10	-	V
VADP - VASGATE OFF	-		-	0	-	V
Trickle Charging Current Regulation, R_s2 = 5mΩ (Limits apply across temperature range of 0°C to +85°C)
Trickle Charge Current Accuracy	-	Trickle, 1024mA	938	1024	1109	mA
Trickle Charge Current Accuracy	-	Trickle, 512mA	410	512	614	mA
Trickle Charge Current Accuracy	-	Trickle, 256mA	180	256	360	mA
Trickle Charge Current Accuracy	-	Trickle, 128mA	55	128	192	mA
Fast Charge to Trickle Charge Threshold	-	V_SYS - V_BGATE	4.5	5.05	5.6	V

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
Trickle Charge to Fast Charge Threshold Hysteresis	-	V_SYS - V_BGATE	50	130	290	mV
Fast Charge to Trickle Charge BGATE Threshold^[2]	-	V_SYS > 7V, V_FB >> V_REF	-	1.15	-	V
Trickle Charge to Fast Charge BGATE Threshold Hysteresis^[2]	-	V_SYS > 7V, V_FB >> V_REF	-	50	-	mV
Ideal Diode Mode
Entering Ideal Diode Mode VSYS Voltage Threshold	-	BGATE off, VSYS falling V_BAT - V_CSON	100	150	200	mV
Exiting Ideal Diode Mode Battery Discharging Current Threshold	-	R_s2 = 5mΩ	190	380	550	mA
Exiting Ideal Diode Mode Battery Charging Current Threshold	-	R_s2 = 5mΩ	150	250	350	mA
BGATE Source	-	V_SYS - V_BGATE = 2V, charging disabled	4	5	10	mA
BGATE Sink	-	V_BGATE - V_GND = 2V, charging enabled	20	30	40	µA
BGATE Sink	-	V_BGATE - V_GND = 2V, in Ideal Diode mode	-	9	-	mA
AMON/BMON
Input Current Sense Amplifier, R_s1 = 10mΩ
CSIP/CSIN Input Voltage Range^[2]	-	-	4	-	30	V
Forward AMON Gain	-	-	-	18.01	-	V/V
Forward AMON Accuracy V_AMON = 18.01 x (V_CSIP - V_CSIN)	-	V_CSIP - V_CSIN = 50mV (5A), V_CSIP = 5V, 28V	-2.8	-	2.8	%
Forward AMON Accuracy V_AMON = 18.01 x (V_CSIP - V_CSIN)	-	V_CSIP - V_CSIN = 10mV (1A), V_CSIP = 5V, 28V	-10	-	10	%
Forward AMON Accuracy V_AMON = 18.01 x (V_CSIP - V_CSIN)	-	V_CSIP - V_CSIN = 5mV (0.5A), V_CSIP = 5V, 28V	-16.8	-	16.8	%
Forward AMON Accuracy V_AMON = 18.01 x (V_CSIP - V_CSIN)	-	V_CSIP - V_CSIN = 1mV (0.1A), V_CSIP = 5V, 28V	-78.8	-	78.8	%
Reverse AMON Gain	-	-	-	17.9	-	V/V
Reverse AMON Accuracy V_AMON = 17.9 x (V_CSIP - V_CSIN)	-	V_CSIN - V_CSIP = 40mV (4A), V_CSIP = 5V, 28V	-4.5	-	4.5	%
Reverse AMON Accuracy V_AMON = 17.9 x (V_CSIP - V_CSIN)	-	V_CSIN - V_CSIP = 10mV (1A), V_CSIP = 5V, 28V	-12.6	-	13.5	%
Reverse AMON Accuracy V_AMON = 17.9 x (V_CSIP - V_CSIN)	-	V_CSIN - V_CSIP = 5mV (0.5A), V_CSIP = 5V, 28V	-25.5	-	25.5	%
Reverse AMON Accuracy V_AMON = 17.9 x (V_CSIP - V_CSIN)	-	V_CSIN - V_CSIP = 2.56mV (0.256A), V_CSIP = 5V, 28V	-48.5	-	48.5	%

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
AMON Minimum Output Voltage	-	V_CSIP - V_CSIN = 0V	-	-	30	mV
Discharge Current Sense Amplifier, R_s2 = 5mΩ
BMON Gain (Battery Discharging)	-	-	-	17.97	-	V/V
BMON Accuracy V_BMON = 17.97×(V_CSON - V_CSOP)	-	V_CSON - V_CSOP = 50mV (10A), V_CSON = 8V, 29.4V	-3.5	-	3.1	%
BMON Accuracy V_BMON = 17.97×(V_CSON - V_CSOP)	-	V_CSON - V_CSOP = 10mV (2A), V_CSON = 8V, 29.4V	-11.5	-	6	%
BMON Accuracy V_BMON = 17.97×(V_CSON - V_CSOP)	-	V_CSON - V_CSOP = 5mV (1A), V_CSON = 8V, 29.4V	-23	-	14	%
BMON Accuracy V_BMON = 17.97×(V_CSON - V_CSOP)	-	V_CSON - V_CSOP = 3mV (0.6A), V_CSON = 8V, 29.4V	-39	-	22.1	%
Charge Current Sense Amplifier, R_s2 = 5mΩ (Limits apply across the temperature range of 0°C to +85°C)
BMON Gain (Battery Charging)	-	-	-	36.07	-	V/V
BMON Accuracy V_BMON = 36.07 x (V_CSOP - V_CSON)	-	V_CSOP - V_CSON = 30mV (6A), V_CSON = 8V, 29.4V	-5	-	5	%
BMON Accuracy V_BMON = 36.07 x (V_CSOP - V_CSON)	-	V_CSOP - V_CSON = 20mV (4A), V_CSON = 8V, 29.4V	-5.9	-	5.9	%
BMON Accuracy V_BMON = 36.07 x (V_CSOP - V_CSON)	-	V_CSOP - V_CSON = 5mV (1A), V_CSON = 8V, 29.4V	-13.9	-	13.9	%
BMON Accuracy V_BMON = 36.07 x (V_CSOP - V_CSON)	-	V_CSOP - V_CSON = 2.5mV (0.5A), V_CSON = 8V, 29.4V	-24.6	-	24.6	%
BMON Accuracy V_BMON = 36.07 x (V_CSOP - V_CSON)	-	V_CSOP - V_CSON = 1.28mV (0.256A), V_CSON = 8V, 29.4V	-45	-	45	%
BMON Minimum Output Voltage	-	V_CSOP - V_CSON = 0V	-	-	31	mV
Discharging Current PROCHOT# Threshold, R_s2 = 5mΩ	I_{DIS_HOT_TH}	DCProchot# = 2.048A	1.77	2.08	2.39	A
Discharging Current PROCHOT# Threshold, Battery Only, R_s2 = 5mΩ	I_{DIS_HOT_TH}	DCProchot# = 12A	10.6	12.9	15.2	A
Discharging Current PROCHOT# Threshold, Battery Only, R_s2 = 5mΩ	I_{DIS_HOT_TH}	DCProchot# = 6A	5.2	6.5	8	A
AMON/BMON Source Resistance^[2]	-	-	-	-	5	Ω
AMON/BMON Sink Resistance^[2]	-	-	-	-	5	Ω
BATGONE and OTGEN
High-Level Input Voltage	-	-	0.9	-	-	V
Low-Level Input Voltage	-	-	-	-	0.4	V
Pull-Down Current	-	`BATGONE` and `OTGEN` = 5V	-	5	-	µA

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
PROCHOT#
PROCHOT# Debounce Time	-	`Control2` register `Bit[10:9]` = `11`	0.85	1	1.15	ms
PROCHOT# Debounce Time	-	`Control2` register `Bit[10:9]` = `10`	425	500	575	µs
PROCHOT# Duration Time	-	`Control2` register `Bit[8:6]` = `000`	8.5	10	11.5	ms
PROCHOT# Duration Time	-	`Control2` register `Bit[8:6]` = `001`	17	20	23	ms
Low VSYS PROCHOT# Trip Threshold	V_{LOW_VSYS_HOT}	`Control1` register `Bit[1:0]` = `00`	5.8	6.0	6.2	V
Low VSYS PROCHOT# Trip Threshold	V_{LOW_VSYS_HOT}	`Control1` register `Bit[1:0]` = `01`	6.1	6.3	6.5	V
Low VSYS PROCHOT# Trip Threshold	V_{LOW_VSYS_HOT}	`Control1` register `Bit[1:0]` = `10`	6.4	6.6	6.8	V
Low VSYS PROCHOT# Trip Threshold	V_{LOW_VSYS_HOT}	`Control1` register `Bit[1:0]` = `11`	6.7	6.9	7.1	V
PSYS with NVDC Charger Configuration when `CONFIG/PSYS` Is Not Tied High^[2]
PSYS Output Current R_s1 = 10mΩ R_s2 = 5mΩ	I_PSYS `Control3` `Bit[9]` = `0` I_PSYS = 0.236µA/W × Power + 0µA	V_CSIP = 28V, V_CSIP - V_CSIN = 40mV, V_BAT = 12V, 29.4V, V_CSOP - V_CSON = -10mV	-5	-	5	%
PSYS Output Current R_s1 = 10mΩ R_s2 = 5mΩ	I_PSYS `Control3` `Bit[9]` = `1` I_PSYS = 0.118µA/W ×Power	V_CSIP = 28V, V_CSIP - V_CSIN = 80mV, V_BAT = 12V, 29.4V, V_CSOP - V_CSON = -20mV	-5	-	5	%
Maximum PSYS Output Voltage	V_{PSYS_MAX}	-	3	-	-	V
Buck-Boost Charger Configuration without BFET when `CONFIG/PSYS` is Tied High
Comparator at `CONFIG/PSYS`[2]	-	-	-	VDD-0.7V	-	V
OTG
OTG Voltage	-	`OTGVoltage` register = 5.004V	4.9	5.03	5.15	V
OTG Current	-	`OTGCurrent` register = 512mA, (`OTGVoltage` = 5.004V, 29.4V)	373	512	675	mA
OTG Current	-	`OTGCurrent` register = 1024mA, (`OTGVoltage` = 5.004V, 29.4V)	870	1024	1200	mA
OTG Current	-	`OTGCurrent` register = 1536mA, (`OTGVoltage` = 5.004V, 29.4V)	1370	1536	1726	mA
OTG Current	-	`OTGCurrent` register = 3072mA, (`OTGVoltage` = 5.004V, 29.4V)	2841	3072	3314	mA
OTG Current	-	`OTGCurrent` register = 4096mA, (`OTGVoltage` = 5.004V, 29.4V)	3858	4096	4350	mA
General Purpose Comparator
General Purpose Comparator Rising Threshold	-	Reference = 1.2V	1.11	1.2	1.32	V
General Purpose Comparator Rising Threshold	-	Reference = 2V	1.93	2	2.1	V
General Purpose Comparator Hysteresis	-	Reference = 1.2V	-	45	-	mV
General Purpose Comparator Hysteresis	-	Reference = 2V	-	45	-	mV

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
Protection
VSYS Absolute Overvoltage Rising Threshold	-	-	32.2	33.6	34.3	V
VSYS Absolute Overvoltage Hysteresis^[2]	-	-	-	540	-	mV
VSYS Overvoltage Rising Threshold	-	`MaxSystemVoltage` register value = 8.4V	9.68	10	10.27	V
VSYS Overvoltage Rising Threshold	-	`MaxSystemVoltage` register value = 29.4V	30.6	31	31.6	V
VSYS Overvoltage Hysteresis	-	`MaxSystemVoltage` register value = 8.4V	550	790	1045	mV
VSYS Overvoltage Hysteresis	-	`MaxSystemVoltage` register value = 29.4V	600	850	1100	mV
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `001`	-	3	-	V
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `010`	-	3.9	-	V
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `011`	-	4.8	-	V
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `100`	-	5.7	-	V
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `101`	-	6.6	-	V
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `110`	-	7.5	-	V
VSYS UV Falling Threshold	-	`Control6` register `Bit[2:0]` = `111`	-	8.4	-	V
VSYS OK Threshold	-	-	0.45	0.6	0.75	V
VSYS OK Source Current	-	-	-	10	-	mA
Over-Temperature Threshold^[2]	-	-	140	150	160	°C
Adapter Overvoltage Rising Threshold	-	-	32.2	33.3	33.95	V
Adapter Overvoltage Hysteresis	-	-	390	590	760	mV
OTG Undervoltage Falling Threshold	-	OTG voltage = 5.004V	2.85	3.2	3.65	V
OTG Undervoltage Rising Hysteresis^[2]	-	OTG voltage = 5.004V	-	0.9	-	V
OTG Overvoltage Rising Threshold	-	OTG voltage = 5.004V	6.4	6.8	7.2	V
OTG Overvoltage Falling Hysteresis^[2]	-	OTG voltage = 5.004V	-	0.9	-	V
Oscillator
Oscillator Frequency, Digital Core Only	-	-	0.85	1	1.15	MHz
Digital Debounce Time Accuracy^[2]	-	-	-15	-	15	%
Miscellaneous
Switching Frequency Accuracy	-	COMP > 1.7V and not in period stretching	-15	-	15	%

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
Battery Learn Mode Auto-Exit Threshold	-	`MinSystemVoltage` = 5.376V `Control1` register `Bit[13]` = `1`	5.05	5.35	5.7	V
Battery Learn Mode Auto-Exit Hysteresis	-	`MinSystemVoltage` = 5.376V `Control1` register `Bit[13]` = `1`	-	330	-	mV
ADP Discharge Current	-	ADP = 5V to 32V	-	10	-	mA
VSYS Discharge Current	-	VSYS = 5V to 30.8V	-	10	-	mA
SMBus
SDA/SCL Input Low Voltage	-	-	-	-	0.6	V
SDA/SCL Input High Voltage	-	-	1.3	-	-	V
SDA/SCL Input Bias Current	-	-	-	-	1	µA
SDA, Output Sink Current	-	`SDA` = 0.4V	4	-	-	mA
SMBus Frequency	f_SMB	-	10	-	400	kHz
Gate Driver^[2]
UGATE1 Pull-Up Resistance	UG1_RPU	100mA source current	-	800	1200	mΩ
UGATE1 Source Current	UG1_SRC	`UGATE1` - `PHASE1` = 2.5V	1.3	2	-	A
UGATE1 Pull-Down Resistance	UG1_RPD	100mA sink current	-	350	475	mΩ
UGATE1 Sink Current	UG1_SNK	`UGATE1` - `PHASE1` = 2.5V	1.9	2.8	-	A
LGATE1 Pull-Up Resistance	LG1_RPU	100mA source current	-	800	1200	mΩ
LGATE1 Source Current	LG1_SRC	`LGATE1` - `GND` = 2.5V	1.3	2	-	A
LGATE1 Pull-Down Resistance	LG1_RPD	100mA sink current	-	300	450	mΩ
LGATE1 Sink Current	LG1_SNK	`LGATE1` - `GND` = 2.5V	2.3	3.5	-	A
LGATE2 Pull-Up Resistance	LG2_RPU	100mA source current	-	800	1200	mΩ
LGATE2 Source Current	LG2_SRC	`LGATE2` - `GND` = 2.5V	1.3	2	-	A
LGATE2 Pull-Down Resistance	LG2_RPD	100mA sink current	-	300	450	mΩ
LGATE2 Sink Current	LG2_SNK	`LGATE2` - `GND` = 2.5V	2.3	3.5	-	A
UGATE2 Pull-Up Resistance	UG2_RPU	100mA source current	-	800	1200	mΩ
UGATE2 Source Current	UG2_SRC	`UGATE2` - `PHASE2` = 2.5V	1.3	2	-	A
UGATE2 Pull-Down Resistance	UG2_RPD	100mA sink current	-	350	475	mΩ
UGATE2 Sink Current	UG2_SNK	`UGATE2` - `PHASE2` = 2.5V	1.9	2.8	-	A
UGATE1 to LGATE1 Dead Time	t_UG1LG1DEAD	-	10	20	40	ns

Parameter	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
LGATE1 to UGATE1 Dead Time	t_LG1UG1DEAD	-	10	20	40	ns
LGATE2 to UGATE2 Dead Time	t_LG2UG2DEAD	-	10	20	40	ns
UGATE2 to LGATE2 Dead Time	t_UG2LG2DEAD	-	10	20	40	ns

Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested.
Values or limits established by characterization and are not production tested.

3.5 SMBus Timing Specification

Parameters	Symbol	Test Conditions	Min^[1]	Typ	Max^[1]	Unit
SMBus Frequency	F_SMB	-	10	-	400	kHz
Bus Free Time	t_BUF	-	4.7	-	-	µs
Start Condition Hold Time from SCL	t_HD:STA	-	4	-	-	µs
Start Condition Set-Up Time from SCL	t_SU:STA	-	4.7	-	-	µs
Stop Condition Set-Up Time from SCL	t_SU:STO	-	4	-	-	µs
SDA Hold Time from SCL	t_HD:DAT	-	300	-	-	ns
SDA Set-Up Time from SCL	t_SU:DAT	-	250	-	-	ns
SCL Low Period	t_LOW	-	4.7	-	-	µs
SCL High Period	t_HIGH	-	4	-	-	µs
SMBus Inactivity Timeout	-	Maximum charging period without a SMBus Write to `MaxSystemVoltage` or `ChargeCurrent` register	-	175	-	s

Limits established by characterization and are not production tested.

3.6 Gate Driver Timing Diagrams

Figure 6. Gate Driver Timing Diagram

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